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 EE103: Microelectronic Devices and Circuits
                 Berkeley微電子電路和器件視頻課程
Instructor: Prof. Ming Wu
( 27課時  ￥68 )

        Microelectronic Devices and Circuits該門視頻課程是UC Berkekey 電子工程專業(yè)本科生一門必修課程，為后續(xù)模擬集成電路課程的學(xué)習(xí)打下基礎(chǔ)。課程共27講，每講80分鐘左右，包括：.rm格式的課程視頻和與視頻課程內(nèi)容配套使用的完整的課程講義。有了課程講義讓您的學(xué)習(xí)更有效，在潛移默化中提高專業(yè)知識和英語能力。
        加州大學(xué)伯克萊分校（UC Berkeley）作為世界一流大學(xué)，有著世界頂級的大師，所設(shè)課程也都是精品中的精品，緊跟最新科技的進(jìn)展。本站推出的美國一流大學(xué)精品視頻課程套裝，讓您足不出戶就能一睹世界一流大學(xué)大師教學(xué)的風(fēng)采；聆聽大師的聲音、拓展國際化的視野、與國際水平看齊、實現(xiàn)自我價值的提升。

　

　

 Course Description:

        This course covers the fundamental circuit and device concepts needed to understand analog integrated circuits. After an overview of the basic properties of semiconductors, the p-n junction and MOS capacitors are described and the MOSFET is modeled as a large-signal device. Two port small-signal amplifiers and their realization using single stage and multistage CMOS building blocks are discussed. Sinusoidal steady-state signals are introduced and the techniques of phasor analysis are developed, including impedance and the magnitude and phase response of linear circuits. The frequency responses of single and multi-stage amplifiers are analyzed. Differential amplifiers are introduced.
        An electronics laboratory is part of the course. Using and understanding electronics laboratory equipment such as: oscilloscope, power supplies, function generator, multimeter, curve-tracer, and RLC meter. Includes a term project of constructing a circuit with appropriate electromechanical device.
　

Course Objectives:

        To provide a basic understanding of semiconductor devices and analog integrated circuits.
　

Textbooks:

        Fundamentals of Microelectronics by Behzad Razavi, Wiley Press, January 2008.
　

Course Schedule

No.

Date

Topics

Lecture

Reading

1

01/22

Introduction
Basic Semiconductor Physics

Lecture 1

Chapter 2.1

2

01/24

Basic Semiconductor Physics (cont'd)
PN Junction Diodes

Lecture 2

Chapter 2.1–2.2

3

01/29

PN Junction Diodes (cont'd)

Lecture 3

Chapter 2.2–2.3, 3.4

4

02/01

Bipolar Junction Transistor (BJT)

Lecture 4

Chapter 4.1–4.4

5

02/05

Bipolar Junction Transistor (BJT) (cont'd)

Lecture 5

Chapter 4.5–4.6

6

02/07

Bipolar Amplifiers

Lecture 6

Chapter 5.1–5.2

7

02/12

Bipolar Amplifier Topologies (1)

Lecture 7

Chapter 5.3.1

8

02/14

Bipolar Amplifier Topologies (cont'd)

Lecture 8

Chapter 5.3.1

9

02/19

BJT Amplifiers (2)

Lecture 9

Chapter 5.3.2

10

02/21

BJT Amplifiers (3)

Lecture 10

Chapter 5.3.3–5.4

11

02/26

BJT Amplifiers (3) (cont'd)

Lecture 10

Chapter 5.3.3–5.4

12

03/04

Cascode Stage

Lecture 11

Chapter 9.1

13

03/06

Current Mirrors

Lecture 12

Chapter 9.2

14

03/11

Frequency Response

Lecture 13

Chapter 11.1–11.3

15

03/13

Frequency Response (cont'd)

Lecture 14

Chapter 11.4–11.6

16

03/18

MOSFET Structure and Operation
Review of Electrostatics
The (N)MOS Capacitor

Lecture 15

Chapter 6.1–6.2.1

17

03/20

MOSFET structure & operation (qualitative)
Large-signal I-V characteristics
Channel length modulation
Small-signal model

Lecture 16

Chapter 6.1–6.3

18

04/01

NMOSFET in ON state (cont'd)
NMOSFET in OFF state
MOSFET models
PMOSFET

Lecture 17

Finish Chapter 6

19

04/03

Basic MOSFET amplifier
MOSFET biasing
MOSFET current sources
Common-source amplifier

Lecture 18

Chapter 7.1–7.2

20

04/08

Common-gate stage
Source follower

Lecture 19

Chapter 7.3–7.4

21

04/10

MOSFET Cascode Stage
MOSFET Current Mirror

Lecture 20

Chapter 9

22

04/17

Frequency Response (MOSFETs)

Lecture 21

Chapter 11

23

04/22

Differential Amplifiers

Lecture 22

Chapter 10.1–10.2

24

04/24

BJT Differential Amplifiers

Lecture 23

Chapter 10.4–10.6.1

25

04/29

BJT Differential Amplifiers (cont'd)

Lecture 23

Chapter 10.4–10.6.1

26

05/06

MOSFET Differential Amplifiers

Lecture 24

Chapter 10.3–10.6

27

 05/08 Course Review 　 　

　

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